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CD828 Dataheets PDF



Part Number CD828
Manufacturers Compensated Deuices Incorporated
Logo Compensated Deuices Incorporated
Description MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS
Datasheet CD828 DatasheetCD828 Datasheet (PDF)

• 1N821 THRU 1N829 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/159 • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C CD821 thru CD829A REVERSE LEAKAGE CURRENT lR = 2 µA @ 25°C & VR = 3 Vdc 22 .

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• 1N821 THRU 1N829 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/159 • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C CD821 thru CD829A REVERSE LEAKAGE CURRENT lR = 2 µA @ 25°C & VR = 3 Vdc 22 MILS ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. -55° TO +100° VOLTAGE EFFECTIVE TEMPERATURE TEMPERATURE STABILITY COEFFICIENT ∆VZT (Note 2) mV 96 96 48 48 19 19 20 9 9 10 5 5 % / °C 0.01 0.01 0.005 0.005 0.002 0.002 0.002 0.001 0.001 0.001 0.0005 0.0005 CDI TYPE NUMBER ZENER VOLTAGE V ZT @I ZT ZENER TEST CURRENT I ZT MAXIMUM ZENER IMPEDANCE ZZT (Note 1) Backside is not cathode and must be electrically isolated T = Metallization Test Pad VOLTS CD821 CD821A CD823 CD823A CD825 CD825A CD826 CD827 CD827A CD828 CD829 CD829A 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 6.2 - 6.9 5.9 - 6.5 5.9 - 6.5 mA 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 OHMS 15 10 15 10 15 10 15 15 10 15 15 10 DESIGN DATA METALLIZATION: Top: C (Cathode) ...................Al A (Anode) ...................... Al Back: .......................................Au AL THICKNESS .........25,000 Å Min GOLD THICKNESS......4,000 Å Min CHIP THICKNESS. ..............10 Mils CIRCUIT LAYOUT DATA: Backside must be electrically isolated. Backside is not cathode. For Zener operation cathode must be operated positive with respect to anode. TOLERANCES: ALL Dimensions + 2 mils NOTE 1 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT. The maximum allowable change observed over the entire temperature range i.e.,the diode voltage will not exceed the specified mV at any discrete temperature between the established limits, per JEDEC standard No.5. NOTE 2 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] CD821 thru CD829A 500 ZENER IMPEDANCE ZZT (OHMS) 100 50 10 5 1 5 6 7 8 9 10 OPERATING CURRENT lZT (mA) FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT CHANGE IN TEMPERATURE COEFFICIENT ( %/°C) +.0010 +.0005 0 -.0005 -.0010 5.5 6.0 6.5 7.0 7.5 8.0 8.5 OPERATING CURRENT lZT (mA) 9.0 9.5 FIGURE 4 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT .


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