MSN10B0K
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
(Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS ● Excellent package ...
