MSN08B2K
80V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabi...
