MSN0608W

MSN0608W 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:14.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Lead Free Application ● Power switching application ● Load switch PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0608W MSN0608W SOP-8 Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20 8 5.6 32 2.1 -55 To 150 Unit V V A A A W ℃ T...