N-Channel MOSFET
MSN0409W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V...
Description
MSN0409W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
PIN Configuration
Schematic diagram
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0409W
MSN0409W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drai...
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