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MSN0409W

MORESEMI

N-Channel MOSFET

MSN0409W 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V...


MORESEMI

MSN0409W

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Description
MSN0409W 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment PIN Configuration Schematic diagram SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package MSN0409W MSN0409W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drai...




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