MSN0212W

MSN0212W 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● DC/DC Converter ● Notebook Vcore Lead Free PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0212W MSN0212W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 30 ±20 12 8 40 2.5 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to...