MSN0207E

MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch PIN Configuration Lead Free Marking and pin assignment SOT-23 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0207E SOT-23 Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 6.5 30 1.4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Re...