Dual N-Channel MOSFET
MSC0605W
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ V...
Description
MSC0605W
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V
(Typ:38mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0605W
MSC0605W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Rang...
Similar Datasheet