MSC0206W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninter...
