MSC0206SE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM application ● Load switch
PIN Configuration
Lead Free
Marking an...
