MSC0205W

MSC0205W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0205W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±10 6 3.8 25 1.25 -55 To 150 ...