MSC0203S

MSC0203S N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V Lead Free ● High power and current handing capability ● Lead free product is acquired ● Surface mount package pin Assignment PIN Configuration SOT-23-6L top view N-channel P-channel Package Marking and Ordering Information Device Marking Device MSC0203S Device Package SOT-23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel Drain-Source Voltage VDS 20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25℃ TA=70℃ TA=25℃ VGS ±12 3 ID 2.4 IDM 13 PD 0.8 Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 P-Channel -20 ±12 -3 -2.4 -13 0.8 -5...