N-Channel Enhancement Mode Field Effect Transistor
Description
CEE02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package.
D
G
CEE SERIES TO-126
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
S...
