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MTDA5N10J3

Cystech Electonics

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2012.09.24 Revised Date : 2013.12.30 Page No. : 1/9 N -Chan...


Cystech Electonics

MTDA5N10J3

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CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2012.09.24 Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET MTDA5N10J3 BVDSS ID RDSON@VGS=10V, ID=10A RDSON@VGS=5V, ID=10A 100V 10A 144mΩ(TYP) 165mΩ(TYP) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit MTDA5N10J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTDA5N10J3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTDA5N10J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Volta...




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