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MTB100N10RKJ3

Part Number	MTB100N10RKJ3
Manufacturer	Cystech Electonics
Description	N-Channel Enhancement Mode Power MOSFET
Features	• Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS I...
Published	Oct 28, 2016
Datasheet	MTB100N10RKJ3 PDF File

Features

• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate
• Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 O...

Similar Datasheet

MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics

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