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MTE300P10J3

P-Channel Enhancement Mode Power MOSFET

Description

Spec. No. : C136J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.6A 368mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTE300P10J3 Outline T...

CYStech Electronics

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