MTB04N03E3

CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTB04N03E3 BVDSS ID Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy L=2mH, ID=26A, VDD=25V Repetitive Avalanche Energy L=0.05mH Total Power Dissipation TC=25°C TC=100°C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature. Symbol VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg MTB04N03E3 Limits ...