P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : 2017.02.13 Page No. : 1/9
P-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : 2017.02.13 Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTB040P04Q8 BVDSS ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON@VGS=-10V, ID=-6A
RDSON@VGS=-4.5V,ID=-5A
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package
-40V -6.8A -5.4A
31mΩ(typ) 41mΩ(typ)
Equivalent Circuit
MTB040P04Q8
Outline
DD
SOP-8 DD
G:Gate S:Source D:Drain
Pin 1
G SSS
Ordering Information
Device MTB040P04Q8-0-T3-G
Package
Shipping
SOP-8 (Pb-free lead plating and halogen-free package)
2500 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTB040P04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C967Q8 Issued Date : 2016.09.21 Revised Date : 2017.02.13 Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25°C (Note 1)
Continuous Drain Current @ VGS=-10V, TA=70°C (Note 1)
Pulsed Drain Current (Note 2)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, ID=-12A, VDD=-15V (Note 3)
Total Power Dissipation (Note 1)
TA=25 °C TA=70 °C
Operating Junction and Storage Temperature
Symbol BVDSS
VGS
ID
IDM IAS EAS
PD
Tj, Tstg
Note : ...
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