BAW56TT1G

BAW56TT1G, SBAW56TT1G Dual Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1), TA = 25°C Derated above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RθJA 555 °C/W Total Device Dissipation, FR−4 Board (Note 2), TA = 25°C Derated above 25°C PD 360 mW 2.9 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RθJA 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If a...