MJE13008 MJE13009
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR M...
MJE13008 MJE13009
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon
NPN transistors designed for high voltage, high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCEO VCEV VEBO
IC ICM IB PD TJ, Tstg ΘJC
MJE13008 MJE13009 300 400 600 700 9.0 12 24 6.0 100 -65 to +150 1.25
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(OFF)=1.5V
ICEV
VCE=Rated VCEV, VBE(OFF)=1.5V, TC=100°C
IEBO
VEB=9.0V
BVCEO
IC=10mA (MJE13008)
300
BVCEO
IC=10mA (MJE13009)
400
VCE(SAT) IC=5.0A, IB=1.0A
VCE(SAT) IC=8.0A, IB=1.6A
VCE(SAT) IC=12A, IB=3.0A
VBE(SAT) IC=5....
