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TIP142T

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PNP Epitaxial Silicon Darlington Transistor

TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Constru...


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TIP142T

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TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP140T VCBO 60 V : TIP141T 80 V : TIP142T 100 V Collector-Emitter Voltage : TIP140T VCEO 60 V : TIP141T 80 V : TIP142T 100 V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG 5 10 15 0.5 2 80 150 -65~150 V A A A W W ℃ ℃ PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit TO-220 1. Base 2. Collector 3. Emitter 12 3...




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