TIP105/106/107
TIP105/106/107
◎ SEMIHOW REV.A0,Oct 2007
TIP105/106/107
TIP105/106/107
Monolithic Construction With B...
TIP105/106/107
TIP105/106/107
◎ SEMIHOW REV.A0,Oct 2007
TIP105/106/107
TIP105/106/107
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP105 : TIP106 : TIP107
VCBO
-60 -80 -100
V V V
Collector-Emitter Voltage : TIP105 : TIP106 : TIP107
VCEO
-60 -80 -100
V V V
Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
VEBO IC ICP IB PC PC TJ
TSTG
-5 -8 -15 -1 2 80 150 -65~150
V A A A W W ℃ ℃
PNP Epitaxial Silicon Darlington
Transistor
Equivalent Circuit
TO-220 1. Base 2. Collector 3. Emitter
12 3
Electrical Char...