BD239C

NPN SILICON POWER TRANSISTOR BD239C 30 W at 25ºC Case Temperature 2A Continuous Collector Current 4A Peak Collector Current 100V Collector-Emitter Voltage Isolated transistor package available on request Custom selections possible Absolute maximum ratings at 25ºC case temperature (unless otherwise noted) RATING Collector-Base Voltage (Ie=0) SYMBOL VCBO VALUE 100 UNIT V Collector-Emitter Voltage (Ib=0) VCEO 100 V Emitter-base voltage (reverse) Continuous collector current Peak collector current (max 300µs, duty cycle 2%) Continuous base current Continuous device dissipation at max 25ºC case temperature (see note 1) Continuous device dissipation at max 25ºC free air temperature (see note 2) Unclamped inductive load energy (see note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds VEBO IC ICM IB P tot P tot ½LIC2 Tj T stg TL 5 2 4 0.6 30 2 22 -65 to +150 -65 to +150 250 V A A A W W mJ ºC ºC ºC NOTES 1...