BU208 BU208A
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SE...
BU208 BU208A
HIGH VOLTAGE
NPN SILICON
POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage
NPN silicon power
transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circuits in color televisions.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg JC
1500 700 10 8.0 15 150 -65 to +175 1.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICES
VCE=1500V
IEBO
VEB=5.0V
BVCEO
IC=100mA
700
BVEBO
IE=10mA
10
VCE(SAT) IC=4.5A, IB=2.0A (BU208)
VCE(SAT) IC=4.5A, IB=2.0A (BU208A)
VBE(SAT) IC=4.5A, IB=2.0A
fT VCE=5.0V, IC=100mA, f=5.0MHz
7.0
ts ...
