Transistor
High voltage power switch. Designed for horizontal deflection output stage of CTV receivers and high voltage...
Transistor
High voltage power switch. Designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application
Features:
Collector-emitter sustaining voltage - 100 mA VCEO (sus) = 400 V (minimum) Optimum drive condition curves
TO-3
Pin 1. Base 2. Emitter Collector (Case)
Maximum Ratings
Dimensions Minimum Maximum
A
37.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I
16.64
17.3
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
Characteristic
Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous-Peak
Base Current-Peak Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol
VCBS VCEO VEBO
IC ICM IB
PD
TJ, TSTG
Thermal Characteristics
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
NPN BUY69A
10 A Silicon Power
Tr...
