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BUV24

Part Number	BUV24
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 25, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 6A ·High Po...
Datasheet	BUV24 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
6V (Max.
)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continu...

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