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BUV22
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon
NPN
Power
Transistor
isc Product Specification BUV22 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL...
Inchange Semiconductor
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