Document
BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Total Dissipation (Tc=25°C)
Symbols Unit
Ptot W
BUV20
BUV21
Specifications BUV22
250
BUV23
BUV24
Max. Collector Current
ICM A
50
40
40
30
20
Junction Temperature
Tjm °C
175
Collector-Base Breakdown
V(BR)CBO V
Voltage
≥160
≥250
≥300
≥400
≥450
Collector-Emitter Breakdown
V(BR)CEO V
Voltage
Emitter-Base Breakdown Voltage
V(BR)EBO V
≥125
≥200
≥250
IC=10mA
≥7
IE=1mA
≥325
≥400
Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A
Saturation Voltage Drop IB=
5A.