MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power complementary Silicon Transistors for use as output devices in c...
MJ2501 & MJ3001
10A, 150W, 80V
Features:
Medium-power complementary Silicon
Transistors for use as output devices in complementary general purpose amplifier applications.
High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A.
Monolithic construction with built Base-Emitter Shunt Resistors.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions
A B C D E F G H I J K
Minimum
Maximum
38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57
39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.16 Dimensions : Millimetres
PNP NPN MJ2501 MJ3001
10 Ampere Darlington Power
Transistors Complementary Silicon 80 Volts 150 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current-Continuous
-Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCEX VEBO IC IB PD
TJ, TSTG
MJ2501/MJ3001
80
5.0 10 12 0.2 150 0.857 -55...
