MJE803G

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO 60 80 Vdc Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCB Vdc 60 80 Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 _C Stresses exceed...