® BUL116D
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
s LOW S...
® BUL116D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION s VERY HIGH SWITCHING SPEED
PRELIMINARY DATA
APPLICATIONS: s COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS
3 2 1
TO-220
DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collect...