Document
ADVANCE INFORMATION
DMT31M6LPS
Green
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Product Summary
BVDSS 30V
RDS(ON) Max 1.35mΩ @VGS = 10V 2.4mΩ @VGS = 4.5V
ID Max TC = +25°C
150A
100A
Description and Applications
Features and Benefits
Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher
Density End Products 100% Unclamped Inductive Switching – Ensures More Reliability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Backlighting Power management functions DC-DC converters
PowerDI5060-8 (Type K)
Mechanical Data
Package: PowerDI®5060-8 (Type K) Package Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate)
S
D
S
D
S
D
Pin1
Top View
Bottom View
Ordering Information (Note 4)
Internal Schematic
G
D
Top View Pin Configuration
Notes:
Part Number DMT31M6LPS-13
Package PowerDI5060-8 (Type K)
Qty. 2,500
Packing Carrier
Tape & Reel
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
DDDD
T31M6LS YY WW
= Manufacturer’s Marking T31M6LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 22 = 2022) WW = Week (01 to 53)
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMT31M6LPS
Document number: DS38971 Rev. 2 - 2
1 of 7 www.diodes.com
October 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 6)
Continuous Drain Current, VGS = 10V (Note 7)
Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 1mH Avalanche Energy, L = 1mH
TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS
DMT31M6LPS
Value
Unit
30
V
±20
V
35.8 28.6
A
150 128
A
83
A
160
A
25.5
A
325
mJ
ADVANCE INFORMATION
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
TA = +25°C TA = +25°C TC = +25°C
Symbol PD RJA PD RJA PD RJC
TJ, TSTG
Value 1.3 99 2.5 50 100 1.2
-55 to +150
Unit W
°C/W W
°C/W W
°C/W °C
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
30
IDSS
—
IGSS
—
VGS(TH)
1
—
RDS(ON)
—
VSD
—
Ciss
—
Coss
—
Crss
—
Rg
—
Qg
—
Qg
—
Qgs
—
Qgd
—
tD(ON)
—
tR
—
tD(OFF)
—
tF
—
tRR
—
QRR
—
Typ
Max
—
—
—
1
—
±100
—
3
1.1
1.35
1.6
2.4
—
1.2
7019
—
3372
—
554
—
0.94
—
123
—
59.1
—
14.9
—
24.5
—
8.6
—
20.2
—
71.5
—
42.3
—
37.2
—
73..