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DMT31M6LPS Dataheets PDF



Part Number DMT31M6LPS
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMT31M6LPS DatasheetDMT31M6LPS Datasheet (PDF)

ADVANCE INFORMATION DMT31M6LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS 30V RDS(ON) Max 1.35mΩ @VGS = 10V 2.4mΩ @VGS = 4.5V ID Max TC = +25°C 150A 100A Description and Applications Features and Benefits  Low RDS(ON) – Minimizes On-State Losses  Excellent Qgd x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% Unclamped Inductive Switching – Ensures More .

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ADVANCE INFORMATION DMT31M6LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS 30V RDS(ON) Max 1.35mΩ @VGS = 10V 2.4mΩ @VGS = 4.5V ID Max TC = +25°C 150A 100A Description and Applications Features and Benefits  Low RDS(ON) – Minimizes On-State Losses  Excellent Qgd x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% Unclamped Inductive Switching – Ensures More Reliability  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power management functions  DC-DC converters PowerDI5060-8 (Type K) Mechanical Data  Package: PowerDI®5060-8 (Type K)  Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.097 grams (Approximate) S D S D S D Pin1 Top View Bottom View Ordering Information (Note 4) Internal Schematic G D Top View Pin Configuration Notes: Part Number DMT31M6LPS-13 Package PowerDI5060-8 (Type K) Qty. 2,500 Packing Carrier Tape & Reel 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information DDDD T31M6LS YY WW = Manufacturer’s Marking T31M6LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 22 = 2022) WW = Week (01 to 53) SS SG PowerDI is a registered trademark of Diodes Incorporated. DMT31M6LPS Document number: DS38971 Rev. 2 - 2 1 of 7 www.diodes.com October 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current, VGS = 10V (Note 6) Continuous Drain Current, VGS = 10V (Note 7) Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 1mH Avalanche Energy, L = 1mH TA = +25°C TA = +70°C TC = +25°C TC = +70°C Symbol VDSS VGSS ID ID IS IDM IAS EAS DMT31M6LPS Value Unit 30 V ±20 V 35.8 28.6 A 150 128 A 83 A 160 A 25.5 A 325 mJ ADVANCE INFORMATION Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C TA = +25°C TC = +25°C Symbol PD RJA PD RJA PD RJC TJ, TSTG Value 1.3 99 2.5 50 100 1.2 -55 to +150 Unit W °C/W W °C/W W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min BVDSS 30 IDSS — IGSS — VGS(TH) 1 — RDS(ON) — VSD — Ciss — Coss — Crss — Rg — Qg — Qg — Qgs — Qgd — tD(ON) — tR — tD(OFF) — tF — tRR — QRR — Typ Max — — — 1 — ±100 — 3 1.1 1.35 1.6 2.4 — 1.2 7019 — 3372 — 554 — 0.94 — 123 — 59.1 — 14.9 — 24.5 — 8.6 — 20.2 — 71.5 — 42.3 — 37.2 — 73..


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