N-Channel MOSFET
Product Summary
BVDSS 24V
RDS(ON) max
5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V
ID max TC = +25°C
70A ...
Description
Product Summary
BVDSS 24V
RDS(ON) max
5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V
ID max TC = +25°C
70A 60A 45A
DMT2004UFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher
density end products Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product 100% Unclamped Inductive Switch (UIS) Test in Production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Backlighting Power Management Functions DC-DC Converters
Mechanical Data
Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Com...
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