fully autoprotected Power MOSFET
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
OMNIFET II: fully autoprotected Power MOSFET
3 1
D2PAK
10
1
PowerSO-10
3 2 1
TO...
Description
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
OMNIFET II: fully autoprotected Power MOSFET
3 1
D2PAK
10
1
PowerSO-10
3 2 1
TO-220
Features
Type
RDS(on)
VNB35NV04-E VNP35NV04-E VNV35NV04-E
10 mΩ(1)
1. For PowerSO-10 only
Ilim 30 A
Vclamp 40 V
Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin
Datasheet - production data
Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power
MOSFET (analog driving) Compatible with standard Power MOSFET
Description
The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
...
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