CJ3439KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW N channel+P Channel MOSFET V(BR)DSS 20 V -20V RDS(on)MAX   380mΩ@ 4.5V  450mΩ@ 2.5V  800mΩ@1.8V     520mΩ@-4.5V  700mΩ@-2.5V  950mΩ@-1.8V   ID 0.75A SOT-363 -0.66A FEATURE z Surface Mount Package z Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K (independently) In a Package APPLICATION z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol N-MOSFET Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (note 1) ID Pulsed Drain Current (tp=10us) IDM P-MOSFET Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (note 1) ID Pulsed Drain Current (tp=10us) IDM Tempera...