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CJ3404 Dataheets PDF



Part Number CJ3404
Manufacturers JCST
Logo JCST
Description MOSFETS
Datasheet CJ3404 DatasheetCJ3404 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance. SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING: R4 Maxim.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance. SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING: R4 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (t ≤10s) ID Pulsed drain current * IDM Power dissipation PD Thermal resistance from junction to ambient RθJA Junction temperature TJ Storage temperature Tstg * Repetitive rating : Pulse width limited by maximum junction temperature. Value 30 ±20 5.8 30 0.35 357 150 -55~ 150 Unit V V A A W ℃/W ℃ ℃ A,Dec,2010 Electrical characteris.


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