N-Channel Enhancement Mode Field Effect Transistor
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability
MARKING: R0
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise note...
