JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6LPlastic-Encapsulate Transistors
CJ2045 Dual 40V complementa...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6LPlastic-Encapsulate
Transistors
CJ2045 Dual 40V complementary
transistors
FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half
MARKING: 2045
EQUIVALENT CIRCUIT
SOT-23-6L
Tr1
NPN and Tr2
PNP Absolute Maximum Ratings (Ta=25℃)
Symbol
VCBO VCEX VCEO VEBO
IC ICM PC RθJA TJ Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current- Peak Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value
NPN
PNP
40 -40
40 -40
30 -30
7 -7
1.5 -1.5
5 -5
350 350
357 357
150
-55~+150
Unit
V V V V A A mW ℃/W ℃ ℃
B,Dec,2012
Tr1
NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base b...