JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate
Transistors
CJ201NL
TRANSISTOR (
NPN)
SOT–23
FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific Applications
APPLICATIONS z Power Management z Peripheral Driver
MARKING: 201N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
20 V
VEBO Emitter-Base Voltage
5V
IC Collector Current
1A
PC Collector Power Dissipation
300 mW
RΘJA Thermal Resistance From Junction To Ambient
417
℃/W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55~+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakd...