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NSVMMBD354LT1G Dataheets PDF



Part Number NSVMMBD354LT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Hot Carrier Mixer Diodes
Datasheet NSVMMBD354LT1G DatasheetNSVMMBD354LT1G Datasheet (PDF)

MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca.

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 VCC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA Junction and Storage Temperature TJ, Tstg 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 417 −55 to +150 °C/W °C www.onsemi.com SOT−23 (TO−236) CASE 318 1 ANODE 3 CATHODE/ANODE 2 CATHODE MMBD352LT1G STYLE 11 1 CATHODE 3 CATHODE/ANODE 2 ANODE MMBD353LT1G NSVMMBD353LT1G STYLE 19 3 CATHODE 1 ANODE 2 ANODE MMBD354LT1G NSVMMBD354LT1G STYLE 9 ANODE 3 1 CATHODE 2 CATHODE MMBD355LT1G STYLE 12 MARKING DIAGRAM Mxx M G G 1 Mxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994 1 October, 2016 − Rev. 9 Publication Order Number: MMBD352LT1/D MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Rating Symbol Min Max Unit Forward Voltage (IF = 10 mAdc) VF V − 0.60 Reverse Leakage Current (Note 3) (VR = 3.0 V) (VR = 7.0 V) IR mA − 0.25 − 10 Capacitance (VR = 0 V, f = 1.0 MHz) C pF − 1.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. ORDERING INFORMATION Device MMBD352LT1G Marking M5G Package SOT−23 (Pb−Free) Shipping† 3,000 Units / Tape & Reel MMBD352LT3G M5G SOT−23 (Pb−Free) 10,000 Units / Tape & Reel MMBD353LT1G M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel NSVMMBD353LT1G M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel MMBD353LT3G M4F SOT−23 (Pb−Free) 10,000 Units / Tape & Reel MMBD354LT1G M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel NSVMMBD354LT1G M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel MMBD355LT1G MJ1 SOT−23 (Pb−Free) 3,000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. IF, FORWARD CURRENT (mA) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS 100 1.0 TA = 85°C 0.9 10 TA = -40°C 0.8 1.0 TA = 25°C 0.7 0.1 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 4.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance www.onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SCALE 4:1 SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: 98ASB42226B DESCRIPTION: SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warrant.


MMBD354LT1G NSVMMBD354LT1G MMBD355LT1G


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