CJ3139KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Ch...
CJ3139KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed
APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers
MARKING: 39K
Maximum ratings (Ta=25℃ unless otherwise noted)
SOT-363
Parameter Drain-Source voltage
Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature
Symbol VDSS VGS ID(DC)
IDM(pulse) PD RθJA Tj Tstg
Value -20 ±12 -0.66 -2.64 150 833 150 -55 ~+150
Units V
A mW ℃/W ℃
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