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CJ2101-G

MOSFET

Description

MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P-Channel MOSFET - Leading trench technology for low RDS(on) extending battery life Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.008 grams(approx.). Comchip SMD Diode Spe...

Comchip

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