CJ1012-G

MOSFET CJ1012-G N-Channel RoHS Device Features - High-Side Switching. - Low On-Resistance. - Low Threshold. - Fast Switching Speed. - ESD protected up to 2KV. Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram G1 S2 3D G : Gate S : Source D : Drain SOT-523 0.067(1.70) 0.059(1.50) 3 0.035(0.90) 0.028(0.70) 1 0.020(0.50)TYP. 2 0.043(1.10) 0.035(0.90) 0.014(0.35) 0.010(0.25) 0.008(0.20) 0.004(0.10) 0.069(1.75) 0.057(1.45) 0.018(0.46) 0.010(0.26) 0.031(0.80) 0.028(0.70) 0.010(0.25) 0.006(0.15) 0.004(0.10) max Dimensions in inches and (millimeter) Maximum Rating (at Ta=25°C unless otherwise noted) Parameter Symbol Drain-source voltage Gate-source voltage Drain current-continuous Drain Current-pulsed (note1) VDSS VGS ID(DC) IDM(pulse) Power dissipation (note2, TA=25°C) Max. Power dissipation (note3, TC=25°C) PD Thermal resistance from junction to ambient Thermal resistance from junction to case Junct...