NJD2873

isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Total Power Dissipation PC @ TC=25℃ Collector Power Dissipation Ta=25℃ TJ Junction Temperature 2 A 3 A 0.4 A 15 W 1.68 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS Rth j-c Thermal Resistance, Junction to Case 10 ℃/W Rth j-a Thermal Ambient Resistance,Junction to 89.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor NJD2873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V (SUS)CEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 MIN TYP MAX UNIT 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 1A ; VCE= 2V IC=0.75A;VCE=1.6V@-40 ℃ ≤TJ ≤ 150℃ VCB= 50V; ...