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NJD1718

Inchange Semiconductor

Silicon PNP Power Transistor


Description
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃...



Inchange Semiconductor

NJD1718

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