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NJD1718
Silicon PNP Power Transistor
Description
isc Silicon
PNP
Power
Transistor
DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃...
Inchange Semiconductor
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NJD1718
Silicon PNP Power Transistor
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