isc Silicon PNP Power Transistor
DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·M...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor
drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-6
A
15 W
0.8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA2126
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
2SA2126
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2.0A; IB= -100mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2.0A; IB= -100mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.1A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -500mA; VCE= -10V
MIN TYP...