2SA1615

isc Silicon PNP Power Transistor 2SA1615 DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency DC/AC converters due to the fast switching speed ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -15 A 15 W 1.0 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -50mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -4A; IB= -50mA ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE-1NOTE DC Current Gain IC= -0.5A; VCE= -2V hFE-2NOTE DC Current Gain IC= -4A; VCE= -2V COB Output Capacitance IE= 0;...