isc Silicon PNP Power Transistor
2SA1615
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and...
isc Silicon
PNP Power
Transistor
2SA1615
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·The 2SA1615 is available for the large current control
in small dimension due to the low saturation and is ideal for high efficiency DC/AC converters due to the fast switching speed
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-15
A
15 W
1.0
150
℃
-55~150
℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -50mA
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= -4A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1NOTE DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2NOTE DC Current Gain
IC= -4A; VCE= -2V
COB
Output Capacitance
IE= 0;...