2SA1242

isc Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium power amplifier and strobe flash applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.5 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1242 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -2V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 ICBO Collector Cutoff Current VCB= -35V; IE= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -4A; VCE= -2V CO...