Document
DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1069/1069A are the mold power transistors developed for ORDERING INFORMATION
high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
Part No. 2SA1069 2SA1069A
Package
TO-220AB (MP-25)
FEATURES
• Low collector saturation voltage
2SA1069-Z 2SA1069A-Z
TO-220SMD (MP-25Z)
• Fast switching speed
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse)
Base current (DC) Total power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) PT
Tj Tstg
Conditions
PW ≤ 300 μs, duty cycle ≤ 10% TC = 25°C TA = 25°C
Ratings −80
−60/−80 −12 −5.0 −10
Unit V V V A A
−2.5 30 1.5 150 .