2N6609

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = -8A ·Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A ·Complement to Type 2N3773 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICP Collector Current-Peak -30 A IB Base Current-Continuous -4 A IBP Base Current-Peak -15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBO...